Semiconductor cleaning apparatus and method

ABSTRACT

The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber with the chuck-based device configured to clean the chamber, a loading port coupled to the chamber and configured to hold one or more wafer storage devices, and a control device configured to control a translational displacement and a rotation of the chuck-based device. The chuck-based device can include a based stage, one or more supporting rods disposed at the base stage and configured to be vertically extendable or retractable, and a padding film disposed on the one or more supporting rods.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 62/752,228, titled “Semiconductor Apparatus and MethodThereof,” filed on Oct. 29, 2018, the disclosure of which isincorporated by reference in its entirety.

BACKGROUND

With advances in semiconductor technology, there has been increasingdemand for higher storage capacity, faster processing systems, higherperformance, and lower costs. To meet these demands, the semiconductorindustry continues to scale down the dimensions of semiconductordevices. Such scaling down has increased the complexity of semiconductormanufacturing processes and the demands for low contamination levels insemiconductor manufacturing systems.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of this disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the common practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a plan view of a semiconductor manufacturingapparatus, according to some embodiments.

FIG. 2A illustrates a cross-sectional view of a wafer-holder structure,according to some embodiments.

FIG. 2B illustrates a top view of a wafer-holder structure, according tosome embodiments.

FIG. 3 illustrates a method for operating a chuck-based device to cleana semiconductor manufacturing apparatus, according to some embodiments.

FIG. 4 illustrates a method for operating an electrostatic chuck (ESC)to clean a semiconductor manufacturing apparatus, according to someembodiments.

FIG. 5 illustrates a control system, according to some embodiments.

FIG. 6 illustrates a computer system for implanting various embodimentsof the present disclosure, according to some embodiments.

Illustrative embodiments will now be described with reference to theaccompanying drawings. In the drawings, like reference numeralsgenerally indicate identical, functionally similar, and/or structurallysimilar elements.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature on a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Asused herein, the formation of a first feature on a second feature meansthe first feature is formed in direct contact with the second feature.In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations discussed.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. The spatially relative termsare intended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the figures. Theapparatus may be otherwise oriented (rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein maylikewise be interpreted accordingly.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “exemplary,” etc., indicatethat the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of oneskilled in the art to effect such feature, structure or characteristicin connection with other embodiments whether or not explicitlydescribed.

It is to be understood that the phraseology or terminology herein is forthe purpose of description and not of limitation, such that theterminology or phraseology of the present specification is to beinterpreted by those skilled in relevant art(s) in light of theteachings herein.

As used herein, the term “about” indicates the value of a given quantitythat can vary based on a particular technology node associated with thesubject semiconductor device. In some embodiments, based on theparticular technology node, the term “about” can indicate a value of agiven quantity that varies within, for example, 5-30% of the value(e.g., ±5%, ±10%, ±20%, or ±30% of the value).

The term “substantially” as used herein indicates the value of a givenquantity that can vary based on a particular technology node associatedwith the subject semiconductor device. In some embodiments, based on theparticular technology node, the term “substantially” can indicate avalue of a given quantity that varies within, for example, ±5% of atarget (or intended) value.

Semiconductor wafers are subjected to different fabrication processes(e.g., wet etching, dry etching, ashing, stripping, metal plating,and/or chemical mechanical polishing) in different semiconductormanufacturing apparatus during the fabrication of semiconductor devices.Generally, the quality of semiconductor devices depends on theperformance of each semiconductor manufacturing apparatus used to formpatterns of device/circuit elements on the semiconductor wafers. Anequally important aspect of semiconductor devices manufacturing is theability to consistently achieve a high yield of operable semiconductordevices on semiconductor wafers.

An overall yield of manufacturing semiconductor devices depends not onlyon an accuracy of each fabrication process, but also on a cleanliness ofsemiconductor manufacturing apparatus. For example, particlecontaminants or accumulated chemical impurities in chambers ofsemiconductor manufacturing apparatus, such as plasma etching andchemical vapor deposition, can be re-deposited or outgassed onsemiconductor wafers surfaces and cause manufacturing defects thatreduce the yield of operable semiconductor devices. Hence, it isnecessary to routinely clean components in the chambers to ensure properfabrication yield. However, such cleaning procedure, if conductedmanually (e.g., hand-operated cleaning), can be time-consuming and thusjeopardize throughput of semiconductor devices manufacturing.

The present disclosure is directed to a chuck-based device to conductthe cleaning procedure to reduce contaminants inside a chamber of asemiconductor manufacturing apparatus. In some embodiments, asemiconductor manufacturing system can include a chamber with thechuck-based device. In some embodiments, the chuck-based device caninclude a base stage and a padding film (e.g., a soft padding film)disposed on the base stage. The semiconductor manufacturing system canfurther include a control device to control motions of chuck's basestage to wipe inner surfaces of the chamber or components enclosed inthe chamber with the padding film. Since the chuck-based device ishoused in the chamber, the cleaning procedure can be conducted in-situinside the chamber without disrupting operation of the semiconductormanufacturing system (e.g., disrupting a vacuum of the chamber, oropening seals of vacuum ports of the chamber), thus ensuring the overallmanufacturing throughput and capacity of the semiconductor manufacturingsystem.

FIG. 1 shows a plan view of a semiconductor device manufacturingapparatus 100, according to some embodiments. Semiconductor devicemanufacturing apparatus 100 can include a chamber 160, a chuck-baseddevice 110 housed inside chamber 160, a loading port 162, and a transfertube 164. In some embodiments, semiconductor device manufacturingapparatus 100 can further include a cell 103 housed inside chamber 160,a gate valve 140 configured to provide a coupling between chamber 160,and another component in semiconductor device manufacturing apparatus100, such as loading port 162 or transfer tube 164. Even though one gatevalve 140, one cell 103, one loading port 162, and one transfer tube 164are shown in FIG. 1, semiconductor device manufacturing apparatus 100can have more than one gate valve, cell, loading port, or transfer tubesimilar to gate valve 140, cell 103, loading port 162, or transfer tube164, respectively.

Chamber 160 can be configured as a processing chamber to provide a highvacuum environment to conduct a plurality of semiconductor manufacturingprocesses on semiconductor wafers (not shown) that require a vacuumenvironment (e.g., a vacuum pressure below 10⁻⁴ torr) to preserve, forexample, a desired mean-free-path of reacting gases, plasma, and/orelectrons in chamber 160 during semiconductor manufacturing processes.

In some embodiments, the plurality of semiconductor manufacturingprocesses can include deposition processes, such as molecular beamepitaxy (MBE), chemical vapor deposition (CVD), plasma-enhanced chemicalvapor deposition (PECVD), low-pressure chemical vapor deposition(LPCVD), electrochemical deposition (ECD), physical vapor deposition(PVD), atomic layer deposition (ALD), metal organic chemical vapordeposition (MOCVD), sputtering, thermal evaporation, e-beam evaporation,or other deposition processes; etching processes, such as dry etching,reactive ion etching (ME), inductively coupled plasma etching (ICP), orion milling; thermal processes, such as rapid thermal annealing (RTA);microscopy, such as scanning electron microscopy (SEM) and transmissionelectron microscopy (TEM); or any combination thereof.

In some embodiments, chamber 160 can be configured as a transfer chamberto transfer semiconductor wafers between an atmospheric environment andanother processing chamber (not shown in FIG. 1) of semiconductor devicemanufacturing apparatus 100), where the other processing chamber can beconfigured to conduct the semiconductor manufacturing processesdescribed above. For example, chamber 160 can be purged or vented toachieve an atmospheric pressure to receive the semiconductor wafers.Chamber 160 can also be pumped down to achieve a vacuum pressure levelsimilar to that of the processing chamber.

Cell 103 can be configured as a gas cell to provide one or more gases, aplasma cell to provide plasma, or an effusion cell to provideatomic/molecular beam fluxes to chamber 160. The one or more gasesprovided by cell 103 can include an inert gas (e.g., nitrogen or air),or any processing gas (e.g., silane or tetrafluoromethane), for thesemiconductor manufacturing processes. In some embodiments, cell 103 canbe a shower head structure (not shown in FIG. 1) interconnected with agas conduit or gas manifold. In some embodiments, cell 103 can furtherinclude an electrode structure (not shown in FIG. 1) configured togenerate the plasma associated with the processing gas.

Chuck-based device 110 can include a padding stage 101, one or moresupporting rods 120 configured to hold padding stage 101, and a basestage 111 configured to accommodate supporting rods 120. A motionmechanism (e.g., a motor, not shown in FIG. 1) can be further includedin chuck-based device 110 to allow base stage 111 to be mobile androtatable. As a result, a motion of padding stage 101 can be provided bybase stage 111 through supporting rods 120. In some embodiments, basestage 111 can further include one or more conduits 121, where each ofsupporting rods 120 can be accommodated in the respective conduit 121and be configured to be extendable or retractable vertically alongbi-direction 123 (e.g., parallel to z-direction).

Padding stage 101 can have a mounting surface where an object (e.g., asubstrate for semiconductor manufacturing processes conducted in chamber160) can be placed on. As discussed above, a translation displacementand a rotation of padding stage 101 can be provided by base stage 111via supporting rods 120, such that padding stage 101 can be configuredto be rotatable and be movable from one position in chamber 160 toanother position in chamber 160. For example, padding stage 101 can bemoved towards/away from cell 103 by vertically (e.g., z-direction)lifting/lowing supporting rods 120. In some embodiments, padding stage101 can be moved in a horizontal direction (e.g., x- or y-direction).Padding stage 101 can also be horizontally (e.g., x-y plane) rotated ina clockwise or a counter-clockwise direction.

In some embodiments, padding stage 101 can include a semiconductorwafer, a metallic plate, a glass plate, a plastic platform, or any othersuitable plate made of insulating material, such as aluminum oxide(Al2O3/alumina) and/or aluminum nitride (AlN).

In some embodiments, padding stage 101 can have any suitable dimensions.For example, padding stage 101 can have a thickness of about 1 μm toabout 1000 μm along the z axis, and a diameter of padding stage 101 canbe about 6 inches, about 8 inches, or other values suitable to holdsemiconductor wafers to be processed. In some embodiments, padding stage101 can have a thickness of about 10 μm to about 800 μm along the zaxis. In some embodiments, padding stage 101 can have a thickness ofabout 50 μm to about 700 μm along the z axis.

Chuck-based device 110 can be configured to clean one or more surfacesof chamber 160 or cell 103 with a padding film 102 (e.g., a soft paddingfilm) disposed on padding stage 101. For example, chuck-based device 110can be configured to use padding film 102 to clean particles or chemicalcontaminants (e.g., by-product coating from a previous deposition oretching process) adhered to a cleaning target, such as one or more areasof inner surfaces of chamber 160 or a surface of cell 103. For suchcleaning process, padding stage 101 can be lifted upwards (e.g., inz-direction) until padding film 102 is in contact with the cleaningtarget. Padding stage 101 can rotate to wipe or rub the cleaning targetusing padding film 102. In some embodiments, padding stage 101 can alsosimultaneously provide a local displacement in the horizontal directionwhile padding film 102 is wiping or rubbing the cleaning target.

In some embodiments, padding film 102 can be placed on a substrate (notshown in FIG. 1), where the substrate can be further placed on paddingstage 101.

In some embodiments, padding film 102 can include one or more of a wipe,a wiper, a textile, a cloth, a towel, a plastic sheet, or any other padmade of soft insulating material.

Loading port 162 can be configured to accommodate a wafer storage device(sometimes referred as front opening unified pod (FOUP)) for temporarilystoring a batch of semiconductor wafers in a controlled environment witha designated gas pressure, gas ambient, humidity or temperature duringintervals between the different semiconductor manufacturing processes.Loading port 162 can include a stage (not shown in FIG. 1) to hold theFOUP. In some embodiments, loading port 162 can include a chamber (notshown in FIG. 1) to accommodate the FOUP in a vacuum or an inert gas(e.g., under nitrogen ambient) environment.

Transfer tube 164 can be configured to provide a central transferconduit to transfer semiconductor wafers between loading port 162 andchamber 160. In some embodiments, transfer tube 164 can include arobotic arm and a wafer orientation stage (both not shown in FIG. 1),where the robotic arm can be configured to transfer wafers betweenloading port 162, the wafer orientation stage, and chamber 160. In someembodiments, transfer tube 164 can be configured to be at atmosphericpressure or at a vacuum environment.

FIGS. 2A and 2B illustrate a wafer-holder structure 200, according tosome embodiments. Wafer-holder structure 200 can be an embodiment ofchuck-based device 110. The discussion of elements with the sameannotations in FIG. 1 and FIGS. 2A-2B applies to each other unlessmentioned otherwise. FIG. 2A illustrates a cross-sectional view ofwafer-holder structure 200 along the x-z plane, and FIG. 2B illustratesa top view of wafer-holder structure 200 (along the a-a′ direction)along the x-y plane. Wafer-holder structure 200 can include anelectrostatic chuck (ESC) structure 210 configured to apply anelectrostatic holding force to hold a wafer 201, padding film 102disposed on ESC structure 210, and a base structure 214, where wafer 201can be a substrate for semiconductor manufacturing processes conductedin chamber 160. Wafer 201 can also be an embodiment of padding stage101. In some embodiments, wafer-holder structure 200 can further includeone or more supporting rods 120 configured to support wafer 201, wherepadding film 102 can be placed on wafer 201 and supporting rods 120 canbe embedded in ESC structure 210. In some embodiments, supporting rods120 can be configured to contact and hold padding film 102.

ESC structure 210 can include a base platen 211, an electrode 209embedded in base platen 211, a heat insulating component 213, and aheating component 212 embedded in heat insulating component 213. ESCstructure 210 can be fixed on base structure 214. Base structure 214 caninclude a cooling component for adjusting the temperature of base platen211. In some embodiments, the cooling component can include a gas tunnel215 that allows a heat transfer gas (e.g., helium gas) to circulatethrough inlet 215-1 and outlet 215-2. The arrows at inlet 215-1 andoutlet 215-2 indicate the directions of the gas flow. In someembodiments, base structure 214 can include a bottom portion 216 thatseals gas tunnel 215 between inlet 215-1 and outlet 215-2. Otherstructures/devices between ESC structure 210 and base structure 214 arenot shown for simplicity.

Base platen 211 can have a mounting surface, where wafer 201 can beplaced on. Base platen 211 can include any suitable insulating material,such as aluminum oxide and/or aluminum nitride. Base platen 211 can haveany suitable dimensions, such as dimensions similar to that of wafer201. In some embodiments, one or more conduits 121 can be embedded inbase platen 211 to accommodate respective supporting rods 120.

Electrode 209 can be in the shape of a thin film, embedded in baseplaten 211. Electrode 209 can be connected to a power supply (inside oroutside of wafer-holder structure 200, not shown) so that a voltage canbe applied to electrode 209 by the power supply to generate a Coulombforce between ESC structure 210 and wafer 201. Wafer 201 can then beattracted to the mounting surface of base platen 211. The magnitude ofthe voltage can be proportional to the coulomb force that attracts wafer201. Electrode 209 can include any suitable conductive material, such astungsten, molybdenum, etc.

Heat generating component 212 can be connected to a power supply (insideor outside of wafer-holder structure 200, not shown) to generate heatwhen a voltage is applied to heat generating component 212. Heatgenerating component 212 can heat base platen 211 to a desiredtemperature, e.g., between about 60 degrees Celsius and about 600degrees Celsius. In some embodiments, heating generating component 212can heat base platen 211 to between about 80 degrees Celsius and about400 degrees Celsius. In some embodiments, heating generating component212 can heat base platen 211 to between about 100 degrees Celsius andabout 300 degrees Celsius. Heat generating component 212 can include anysuitable material of sufficiently low specific heat capacity, such asmetals (e.g., copper (Cu), tungsten (W), and/or nickel (Ni)). Heatgenerating component 212 can be uniformly distributed in heat insulatingcomponent 213 and have suitable dimensions. For example, heat generatingcomponent 212 can have a thickness of about 3 μm to about 120 μm. Insome embodiments, heat generating component 212 can have a thickness ofabout 5 μm to about 100 μm. In some embodiments, heat generatingcomponent 212 can have a thickness of about 10 μm to about 80 μm.

Heat insulating component 213 can include an insulating material tocover heat generating component 212. Heat insulating component 213 caninclude a suitable insulating material, such as an insulating resin(e.g., polyimide, low-melting-point glass, alumina, and/or silica). Athermal expansion coefficient of heat insulating component 213 can besimilar or comparable to a thermal expansion coefficient of base platen211. Heat insulating component 213 can have any suitable length alongthe z-axis. For example, heat insulating component 213 can have athickness of about 10 μm to about 1.5 cm. In some embodiments, heatinsulating component 213 can have a thickness of about 30 μm to about1.0 cm. In some embodiments, heat insulating component 213 can have athickness of about 50 μm to about 0.8 cm.

Base structure 214 can provide support to ESC structure 210. Basestructure 214 can include materials of sufficient stiffness andcorrosion resistance, such as aluminum or a protection coating, e.g., analumite layer. Base structure 214 can include a cooling component thatcan adjust the temperature of the mounting surface of base platen 211.The cooling component can include a gas tunnel 215. A heat transfer gascan circulate in gas tunnel 215 through inlet 215-1 and outlet 215-2. Abottom portion 216 can seal the heat transfer gas between inlet 215-1and outlet 215-2. The arrows indicate the directions of the gas flow.The heat transfer gas can include any suitable gas, such as helium. Thecooling component can also include gas passages (not shown) that connectgas tunnel 215 to the mounting surface of base platen 211 (e.g., underwafer 201) so the heat transfer gas can cool the surface temperature ofbase platen 211, thus adjusting the processing temperature of wafer 201.Optionally, the cooling component can include a fluid passage thatallows a heat transfer fluid to circulate around/under heat insulatingcomponent 213 and to adjust the surface temperature of base platen 211.The fluid can include, e.g., water. For ease of viewing, the fluidpassage is not shown in the figures.

Wafer-holder structure 200 can be configured to clean interior ofchamber 160 or cell 103. As shown in FIG. 2B, padding film 102 can beattached to wafer 201 via an adhesive, a tape, or any mechanicalcomponent such as screws or clamps. Despite padding film 102 beingsmaller than wafer 201 in FIG. 2B, padding film 102 can have a similarto larger size than wafer 201 in other embodiments. Padding film 102together with wafer 201 can be lifted upwards or downwards alongz-direction by stretching or retracing supporting rods 120. Padding film102 together with wafer 201 can also be displaced along a horizontaldirection (e.g., x- or y-direction) by ESC structure 210. In responsepadding film 102 is in contact with a cleaning target, such as innersurfaces of chamber 160 or a surface of cell 103, ESC structure 210 canbe configured to rotate and/or the displace padding film 102 togetherwith wafer 201 to wipe or rub the cleaning target.

In some embodiments, padding film 102 can be dipped in de-ionized wateror an organic solvent, such as isopropanol or alcohol, to enhance awiping efficiency to remove particles or chemical contaminants fromsurfaces of the cleaning target.

FIG. 3 is an exemplary method 300 for operating a chuck-based device toclean a semiconductor manufacturing apparatus, where the chuck-baseddevice can be housed in an interior of a chamber of a semiconductormanufacturing apparatus, according to some embodiments. This disclosureis not limited to this operational description. It is to be appreciatedthat additional operations may be performed. Moreover, not alloperations may be needed to perform the disclosure provided herein.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 3. In some implementations, one ormore other operations may be performed in addition to or in place of thepresently described operations. For illustrative purposes, method 300 isdescribed with reference to the embodiments of FIG. 1. However, method300 is not limited to these embodiments.

Exemplary method 300 begins with operation 310, where a contaminationlevel in a chamber, which accommodates the chuck-based device, isdetermined. The contamination level in the chamber can be a level ofparticles or a level of chemical by-products from previous manufacturingprocesses. The contamination level in the chamber can be determined byplacing a sample substrate in the chamber, followed by detectingrespective contaminants transferred from the chamber to the samplesubstrate surface. For example, the sample substrate can be asemiconductor wafer or any other plates, such as a glass, plastic, ormetallic plate. The sample substrate is placed on the chuck-based deviceor any other stage/platform in the chamber. After the sample substrateis loaded in the chamber, one or more semiconductor processes associatedwith the chamber can be optionally applied to the sample substrate. Forexample, the chamber configured to conduct reactive ion-etching (ME) canapply the respective ME processes on the sample substrate. The samplesubstrate can then be transferred out the chamber, followed by detectingthe respective contamination level on one or more areas the samplesubstrate surface via a particle counter, surface profiler, or anymicroscopy. In some embodiments, the respective contamination level canbe detected via any surface chemistry analysis technique, such as X-rayphotoelectron (XPS) or energy-dispersive X-ray spectroscopy (EDAX).

In operation 320, the contamination level is compared to a referencelevel. The reference level can be a pre-determined threshold of aparticle count or a pre-determined threshold of an amount of a chemicaltrace. The reference level can represent or be associated with a desiredcleanness requirement of the semiconductor manufacturing apparatus'schamber. For example, the reference level can be a pre-determinedthreshold of particle count, where a fabrication process conducted in achamber with or below the reference level of particle count can achievea desired production yield of semiconductor devices manufacturing. Asanother example, the reference level can be a pre-determined atomicconcentration of a chemical trace (e.g., heavy metal trace), where amanufacturing of semiconductor devices conducted in a chamber with orbelow the reference level of the chemical trace can generate a highpurity of semiconductor device layers, thus achieving a desiredelectrical performance of semiconductor devices. In some embodiments,the reference level can be determined or learned from one or morehistorical semiconductor manufacturing processes conducted in thechamber or another similar semiconductor manufacturing apparatus. Thecomparison between the contamination level and the reference level caninclude subtracting the contamination level from the reference level. Insome embodiments, the comparison can include subtracting thecontamination level from an averaged attribute (e.g., an averagedparticle count from one or more areas of the sample substrate) of thereference level. In some embodiments, the comparison can be performed bya computer system as described in FIG. 6.

In response to the contamination level being equal to or above thereference level, the semiconductor manufacturing apparatus is cleanedbased on operations 330-350.

In operation 330, a padding film is loaded on a stage of the chuck-baseddevice in the chamber of the semiconductor manufacturing apparatus. Thepadding film can be placed in a transfer module (e.g., a robotic arm)outside of and interconnected with the chamber, where the transfermodule can transfer the padding film into the chamber and place thepadding film on the stage of the chuck-based device. For example, thechamber can be under a vacuum level, where the padding film can beinitially placed on a wafer station of the transfer module under anatmospheric environment. The transfer module can then be pumped down tomatch its vacuum level to that of the chamber, followed by deliveringthe padding film from the wafer station of the transfer tube to thechuck-based device housed in the chamber via a robotic arm of thetransfer module. Details of operation 330 can be referred to thedescription of FIG. 1.

In some embodiments, the chamber can be placed under the atmosphericenvironment, where the padding film can be manually placed on thechuck-based device through a port or a flange of the chamber. In someembodiments, the padding film can be dipped or sprayed with anisopropanol, an alcohol, an organic solvent, or a de-ionized waterbefore or after placement on the chuck-based device's stage.

In operation 340, the padding film is moved to be in contact with acomponent in the chamber. A position of the padding film can becontrolled by a motion of the stage provided by the chuck-based device.For example, referring to FIG. 1, the padding film disposed on the stagecan be moved along a horizontal or a vertical direction in the chamberby the chuck-based device. The chuck device can shift the padding filmat any designated x-y-z coordinate in the chamber. In some embodiments,the chuck device can shift the stage, which holds the padding film,towards the component until the padding film is in contact with thecomponent in the chamber. The component can be any fabrication devicewhich is housed in the chamber and subject to contamination. Forexample, the component can be a plasma cell or a gas cell housed in thechamber. In some embodiments, the component can also be one or moreareas of inner surfaces of the chamber.

Further, in operation 340, the component is cleaned using the paddingfilm. In response to the padding film being in contact with thecomponent, the padding film can be controlled by the chuck-based deviceto wipe a surface of the component. Referring to FIG. 1, for example,the chuck-based device can rotate the stage holding the padding film,such that the padding film can continuously rub the component surface.The chuck-based device can also displace the padding film to rub one ormore areas of the component surface. By rubbing or wiping the component,contaminants on the component surface can be transferred to the wipe,thus eliminating or reducing the respective contamination level in thechamber.

FIG. 4 is an exemplary method 400 for operating a ESC to clean asemiconductor manufacturing apparatus, where the ESC can be enclosed ina chamber of a semiconductor manufacturing apparatus, according to someembodiments. This disclosure is not limited to this operationaldescription. It is to be appreciated that additional operations may beperformed. Moreover, not all operations may be needed to perform thedisclosure provided herein. Further, some of the operations may beperformed simultaneously, or in a different order than shown in FIG. 4.In some implementations, one or more other operations may be performedin addition to or in place of the presently described operations. Forillustrative purposes, method 400 is described with reference to theembodiments of FIGS. 2A-2B. However, method 400 is not limited to theseembodiments.

Exemplary method 400 begins with operation 410, where a padding film isplaced on a carrier substrate, such as a semiconductor wafer. Thepadding film can be placed on the carrier substrate under an atmosphericenvironment or an inert gas environment (e.g., in a nitrogen glove box).The padding film can be further attached on the carrier substrate via anadhesive, a tape, a mechanical component (e.g., a screw or a clamp), ora Van der Waals force provided by a liquid. Details of operation 410 canbe referred to the description of FIGS. 2A-2B.

In operation 420, a liquid is sprayed on a surface of the padding film.The liquid can be a detergent to enhance the padding film's wipingefficiency to clean the chamber of the semiconductor manufacturingapparatus and can include a de-ionized water or any organic solvent suchas isopropanol or alcohol. In some embodiments, the carrier substratetogether with the padding film can be immersed in a pool or a tank ofthe liquid.

In operation 430, the carrier substrate is placed on a stage of the ESChoused in the chamber of the semiconductor manufacturing apparatus. TheESC can be configured to further provide a coulomb force (e.g., anelectrostatic force) to attract the carrier substrate to the ESC stage.Referring to FIG. 2A, for example, one or more electrodes in the ESC canbe connected to a power supply such that the respective voltage on theone or more electrode can generate the coulomb force to attract thecarrier substrate to the padding film.

In some embodiments, the carrier substrate can be placed on a waferstation of a transfer module interconnected with the chamber, where thewafer station can be under an atmospheric environment. The transfermodule then can be pumped down to a vacuum level matched with thechamber. A robotic arm of the transfer module can deliver the carriersubstrate from the wafer station to the ESC stage.

In operation 440, the padding film is shifted and rotated to conduct awiping activity on a target inside the chamber. The target can be acomponent (e.g., a plasma cell or a gas cell) inside the chamber or oneor more inner surfaces of the chamber. The ESC stage can move thepadding film to be in contact with the target, followed by shifting androtating the padding film to conduct the wiping activity to rub surfacesof the target. Such wiping activity can remove contaminants (e.g.,particles or by-product chemical trace) adhered to surfaces of thetarget, thus eliminating or reducing the respective contamination levelin the chamber. After the wiping activity, the ESC stage can move thepadding film away from the target.

In operation 450, the chamber or the ESC stage is purged with an inertgas or air. Since the liquid (e.g., organic solvent) used to facilitythe wiping efficiency can be left on the target surfaces during thewiping activity, the purging can be applied to blow dry the liquid fromthe target surfaces. In some embodiments, the purging can be conductedby flowing the inert gas (e.g., nitrogen) from the wiped target (e.g.,the plasma cell or the gas cell) or any other gas outlet in the chamber.After the purging, the padding film together with the carrier substratecan be transferred out the chamber and get replaced.

FIG. 5 illustrates a semiconductor manufacturing system 500 using achuck-based device of the present disclosure, according to someembodiments. As shown in FIG. 5, semiconductor manufacturing system 500can include a control unit/device 501, a communication mechanisms 502,and a chuck-based device 503 contained in a semiconductor devicemanufacturing apparatus 505. Control unit/device 501 can include anysuitable computer system (e.g., workstation and portable electronicdevice) to store programs and data for various operations ofsemiconductor device manufacturing apparatus 505, such as instructingsemiconductor device manufacturing apparatus 505 to conduct asemiconductor manufacturing process on a wafer placed on chuck-baseddevice 503 and controlling a motion of chuck-base device 503, where themotion can be a translational displacement or a rotation. The differentfunctions of control unit/device 501 should not be limited by theembodiments of the present disclosure. Communication mechanism 502 caninclude any suitable network connection between control unit/device 501and semiconductor device manufacturing apparatus 505. For example,communication mechanism 502 can include a local area network (LAN)and/or a WiFi network. In some embodiments, control unit/device 501 cantransmit control signals through communication mechanism 502 to controlthe motion of chuck-based device 503. Chuck-based device 503 can behoused in a chamber of semiconductor device manufacturing apparatus 505,where chuck-based device 503 and semiconductor device manufacturingapparatus 505 can be an embodiment of chuck-based device 110 andsemiconductor device manufacturing apparatus 100, respectively. In someembodiments, chuck-based device 503 can include an ESC structureconfigured to provide an electrostatic force to attract a substrate to astage of chuck-based device 503.

FIG. 6 is an illustration of an example computer system 600 in whichvarious embodiments of the present disclosure can be implemented,according to some embodiments. Computer system 600 can be used, forexample, in control unit/device 501 of FIG. 5. Computer system 600 canbe any well-known computer capable of performing the functions andoperations described herein. For example, and without limitation,computer system 600 can be capable of processing and transmittingsignals. Computer system 600 can be used, for example, to control themotion of chuck-based device 503.

Computer system 600 includes one or more processors (also called centralprocessing units, or CPUs), such as a processor 604. Processor 604 isconnected to a communication infrastructure or bus 606. Computer system600 also includes input/output device(s) 603, such as monitors,keyboards, pointing devices, etc., that communicate with communicationinfrastructure or bus 606 through input/output interface(s) 602. Acontrol tool can receive instructions to implement functions andoperations described herein—e.g., the functions of semiconductormanufacturing system 500 described in FIG. 5 and the method/processdescribed in FIGS. 3-4—via input/output device(s) 603. Computer system600 also includes a main or primary memory 608, such as random accessmemory (RAM). Main memory 608 can include one or more levels of cache.Main memory 608 has stored therein control logic (e.g., computersoftware) and/or data. In some embodiments, the control logic (e.g.,computer software) and/or data can include one or more of the functionsdescribed above with respect to semiconductor device manufacturingapparatus 100. In some embodiments, processor 604 can be configured toexecute the control logic stored in main memory 608.

Computer system 600 can also include one or more secondary storagedevices or memory 610. Secondary memory 610 can include, for example, ahard disk drive 612 and/or a removable storage device or drive 614.Removable storage drive 614 can be a floppy disk drive, a magnetic tapedrive, a compact disk drive, an optical storage device, tape backupdevice, and/or any other storage device/drive.

Removable storage drive 614 can interact with a removable storage unit618. Removable storage unit 618 includes a computer usable or readablestorage device having stored thereon computer software (control logic)and/or data. Removable storage unit 618 can be a floppy disk, magnetictape, compact disk, DVD, optical storage disk, and/any other computerdata storage device. Removable storage drive 614 reads from and/orwrites to removable storage unit 618 in a well-known manner.

According to some embodiments, secondary memory 610 can include othermechanisms, instrumentalities or other approaches for allowing computerprograms and/or other instructions and/or data to be accessed bycomputer system 600. Such mechanisms, instrumentalities or otherapproaches can include, for example, a removable storage unit 622 and aninterface 620. Examples of the removable storage unit 622 and theinterface 620 can include a program cartridge and cartridge interface(such as that found in video game devices), a removable memory chip(such as an EPROM or PROM) and associated socket, a memory stick and USBport, a memory card and associated memory card slot, and/or any otherremovable storage unit and associated interface. In some embodiments,secondary memory 610, removable storage unit 618, and/or removablestorage unit 622 can include one or more of the functions describedabove with respect to semiconductor device manufacturing apparatus 100.

Computer system 600 can further include a communication or networkinterface 624. Communication interface 624 enables computer system 600to communicate and interact with any combination of remote devices,remote networks, remote entities, etc. (individually and collectivelyreferenced by reference number 628). For example, communicationinterface 624 can allow computer system 600 to communicate with remotedevices 628 over communications path 626, which can be wired and/orwireless, and which can include any combination of LANs, WANs, theInternet, etc. Control logic and/or data can be transmitted to and fromcomputer system 600 via communication path 626.

The functions/operations in the preceding embodiments can be implementedin a wide variety of configurations and architectures. Therefore, someor all of the operations in the preceding embodiments—e.g., thefunctions of semiconductor manufacturing system 500 described in FIG. 5and the method/process described in FIGS. 3-4—can be performed inhardware, in software or both. In some embodiments, a tangible apparatusor article of manufacture including a tangible computer useable orreadable medium having control logic (software) stored thereon is alsoreferred to herein as a computer program product or program storagedevice. This includes, but is not limited to, computer system 600, mainmemory 608, secondary memory 610 and removable storage units 618 and622, as well as tangible articles of manufacture embodying anycombination of the foregoing. Such control logic, when executed by oneor more data processing devices (such as computer system 600), causessuch data processing devices to operate as described herein. Forexample, the hardware/equipment can be connected to or be part ofelement 628 (remote device(s), network(s), entity(ies) 628) of computersystem 600.

In some embodiments, a semiconductor manufacturing system can include achamber with a chuck-based device configured to clean the chamber, aloading port coupled to the chamber and configured to hold one or morewafer storage devices, and a control device configured to control atranslational displacement and a rotation of the chuck-based device. Thechuck-based device can include a based stage, one or more supportingrods disposed at the base stage and configured to be verticallyextendable or retractable, and a padding film disposed on the one ormore supporting rods.

In some embodiments, a method for cleaning a semiconductor manufacturingapparatus can include determining a contamination level in a chamber ofthe semiconductor manufacturing apparatus where the chamber can includea chuck-based device, loading a padding film on a stage of thechuck-based device, and moving the padding film in contact with acomponent in the chamber.

In some embodiments, a method for operating a electrostatic chuck (ESC)to clean a chamber can include placing a padding film on a carriersubstrate, placing the substrate on a stage of the ESC, and shifting androtating the padding film to conduct a wiping activity on a targetinside the chamber.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor manufacturing system, comprising:a chamber comprising a chuck-based device configured to clean thechamber, wherein the chuck-based device comprises: a base stage; one ormore supporting rods disposed at the base stage and configured to bevertically extendable or retractable; and a padding film disposed on theone or more supporting rods; a loading port coupled to the chamber andconfigured to hold one or more wafer storage devices; and a controldevice configured to control a translational displacement and a rotationof the chuck-based device.
 2. The semiconductor manufacturing system ofclaim 1, further comprising a cell configured to provide a plasma or agas.
 3. The semiconductor manufacturing system of claim 1, wherein thechuck-based device further comprises a padding stage configured to holdthe padding film.
 4. The semiconductor manufacturing system of claim 3,wherein the padding stage is supported by the one or more supportingrods.
 5. The semiconductor manufacturing system of claim 3, wherein thepadding stage comprises a semiconductor wafer, a glass plate, a metallicplate, a plastic platform, or an insulator plate.
 6. The semiconductormanufacturing system of claim 1, wherein the chuck-based device furthercomprises a heating component configured to heat the base stage.
 7. Thesemiconductor manufacturing system of claim 1, wherein the padding filmcomprises a wipe, a wiper, a textile, a cloth, or a towel.
 8. A methodfor cleaning a semiconductor manufacturing apparatus, comprising:determining a contamination level in a chamber of the semiconductormanufacturing apparatus, wherein the chamber comprises a chuck-baseddevice; loading a padding film on a stage of the chuck-based device; andmoving the padding film in contact with a component in the chamber. 9.The method of claim 8, wherein determining the contamination level inthe chamber comprises: placing a substrate in the chamber; conducting asemiconductor manufacturing process on the substrate; and determining aparticle count on a surface of the substrate.
 10. The method of claim 8,wherein loading the padding film on the stage comprises: attaching thepadding film on a substrate; and placing the substrate with the paddingfilm on the stage.
 11. The method of claim 8, wherein loading thepadding film on the stage comprises dipping the padding film in anisopropanol, an alcohol, an organic solvent, or a de-ionized water. 12.The method of claim 8, wherein moving the padding film in contact withthe component comprises shifting the padding film towards inner surfacesof the chamber, a plasma cell housed in the chamber, or a gas cellhoused in the chamber.
 13. The method of claim 8, wherein moving thepadding film in contact with the component comprises wiping or rubbingthe component using the padding film.
 14. The method of claim 8, whereinmoving the padding film in contact with the component comprises rotatingor displacing the stage of the chuck-based device.
 15. A method foroperating a electrostatic chuck (ESC) to clean a chamber, comprising:placing a padding film on a carrier substrate; placing the substrate ona stage of the ESC; and shifting and rotating the padding film toconduct a wiping activity on a target inside the chamber.
 16. The methodof claim 15, further comprising purging the ESC with an inert gas orair.
 17. The method of claim 15, further comprising spraying the paddingfilm with an isopropanol, an alcohol, an organic solvent, or ade-ionized water.
 18. The method of claim 15, wherein placing thepadding film on the carrier substrate comprises attaching the paddingfilm to the carrier substrate via an adhesive, a tape, a mechanicalcomponent, or a Van der Waals force provided by a liquid.
 19. The methodof claim 15, wherein placing the substrate on the stage comprisessecuring the carrier substrate on the stage via an electrostatic force.20. The method of claim 15, wherein the ESC is housed in the chamber,and wherein shifting and rotating the padding film to conduct the wipingactivity comprises contacting the padding film with one or more innersurfaces of the chamber, a gas cell in the chamber, or a plasma cell inthe chamber.